Invention Grant
- Patent Title: Semiconductor devices, methods of manufacture thereof, and capacitors
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Application No.: US15883746Application Date: 2018-01-30
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Publication No.: US10727294B2Publication Date: 2020-07-28
- Inventor: Wen-Chih Chiou , Shin-Puu Jeng , Ebin Liao
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522 ; H01L23/525 ; H01L23/532 ; H01L27/02 ; H01L27/08
Abstract:
Semiconductor devices, methods of manufacture thereof, and capacitors are disclosed. In some embodiments, a semiconductor device includes a first capacitor and a protection device coupled in series with the first capacitor. A second capacitor is coupled in parallel with the first capacitor and the protection device.
Public/Granted literature
- US20180175137A1 Semiconductor Devices, Methods of Manufacture Thereof, and Capacitors Public/Granted day:2018-06-21
Information query
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