Invention Grant
- Patent Title: Group III nitride epitaxial substrate and method for manufacturing the same
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Application No.: US14131987Application Date: 2012-07-11
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Publication No.: US10727303B2Publication Date: 2020-07-28
- Inventor: Tetsuya Ikuta , Tomohiko Shibata
- Applicant: Tetsuya Ikuta , Tomohiko Shibata
- Applicant Address: JP Tokyo
- Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.
- Current Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@264d229b
- International Application: PCT/JP2012/004484 WO 20120711
- International Announcement: WO2013/008461 WO 20130117
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/66 ; H01L29/778 ; H01L21/02 ; C30B29/40 ; C30B29/68 ; C30B25/02 ; H01L29/20 ; H01L33/00
Abstract:
Provided is a Group III nitride epitaxial substrate that can suppress the occurrence of breakage during a device formation process and a method for manufacturing the same. A Group III nitride epitaxial substrate according to the present invention includes a Si substrate, an initial layer in contact with the Si substrate, and a superlattice laminate, formed on the initial layer, including a plurality of sets of laminates, each of the laminates including, in order, a first layer made of AlGaN with an Al composition ratio greater than 0.5 and 1 or less and a second layer made of AlGaN with an Al composition ratio greater than 0 and 0.5 or less. The Al composition ratio of the second layer progressively decreases with distance from the substrate.
Public/Granted literature
- US20140209862A1 GROUP III NITRIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-07-31
Information query
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