A semiconductor apparatus includes a semiconductor substrate. Semiconductor substrate includes an active region and a peripheral region surrounding active region. Semiconductor substrate has a front surface and a back surface. A semiconductor device includes an n− drift region and a p+ collector layer. Peripheral region includes n− drift region and a p+ back surface peripheral layer. P+ back surface peripheral layer is provided on the back surface side of n− drift region. A first hole concentration in p+ back surface peripheral layer is higher than a second hole concentration in p+ collector layer. The short-circuit capability of semiconductor apparatus is improved.