Invention Grant
- Patent Title: Bipolar junction transistor
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Application No.: US16406003Application Date: 2019-05-07
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Publication No.: US10727324B2Publication Date: 2020-07-28
- Inventor: Sheng Cho , Chen-Wei Pan
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6477031c
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/08 ; H01L29/06 ; H01L29/735 ; H01L29/732
Abstract:
A bipolar junction transistor includes: an emitter region; a base region; and a collector region, wherein each of the emitter region, the base region, and the collector region comprises fin-shaped structures. Preferably, the emitter region, the base region, and the collector region are disposed along a first direction and the fin-shaped structures are disposed along a second direction, in which the first direction is orthogonal to the second direction.
Public/Granted literature
- US20190267478A1 BIPOLAR JUNCTION TRANSISTOR Public/Granted day:2019-08-29
Information query
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