Invention Grant
- Patent Title: Semiconductor device with diode region
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Application No.: US16598115Application Date: 2019-10-10
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Publication No.: US10727330B2Publication Date: 2020-07-28
- Inventor: Ralf Siemieniec , Wolfgang Bergner , Romain Esteve , Dethard Peters
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2d29594e
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/04 ; H01L29/66 ; H01L29/04 ; H01L29/16 ; H01L29/167 ; H01L29/423 ; H01L29/06 ; H01L29/10 ; H01L29/861
Abstract:
A semiconductor device includes a SiC body having a first surface, a gate trench extending from the first surface into the SiC body and having a first sidewall, a second sidewall opposite the first sidewall, and a bottom, a source region of a first conductivity type formed in the SiC body and adjoining the first sidewall of the gate trench, a drift region of the first conductivity type formed in the SiC body below the source region, a body region of a second conductivity type formed in the SiC body between the source region and the drift region and adjoining the first sidewall of the gate trench, and a diode region of the second conductivity type formed in the SiC body and adjoining the second sidewall and the bottom of the gate trench but not the first sidewall of the gate trench.
Public/Granted literature
- US20200044076A1 Semiconductor Device with Diode Region Public/Granted day:2020-02-06
Information query
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