An ultraviolet light-emitting element includes a support substrate, a group III-V nitride semiconductor layer structure mounted on a mounting surface of the support substrate and including an n-type semiconductor layer, a light-emitting layer, a p-type cladding layer and a p-type contact layer stacked in this order on the support substrate, and an n-type electrode and a p-type electrode mounted on the n-type semiconductor and p-type contact layer, respectively. The support substrate has an indented portion formed on at least a part of a light emitting surface of the support substrate opposite to a mounting surface of the n-type semiconductor layer. An area of the n-type semiconductor layer surface exposed to the outside is at least 20% and at most 90% in largeness. Areas of the p-type contact layer surface and p-type electrode surface exposed to the outside are at least 5% and at most 50% in largeness.