Invention Grant
- Patent Title: Dilute-Antimonide group-III-Nitride nanostructure optoelectronic devices
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Application No.: US16030855Application Date: 2018-07-09
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Publication No.: US10727372B2Publication Date: 2020-07-28
- Inventor: Mohammad Faqrul Alam Chowdhury , Zetian Mi
- Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Applicant Address: US MI Ann Arbor
- Assignee: The Regents of the University of Michigan
- Current Assignee: The Regents of the University of Michigan
- Current Assignee Address: US MI Ann Arbor
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/32 ; H01L33/06 ; H01L33/20 ; H01L33/00 ; H01L27/15 ; H01L33/44 ; H01L33/42 ; H01L33/24 ; H01L33/08 ; H01L33/18
Abstract:
A nanostructure optoelectronic device, in accordance with aspects of the present technology, can include a group-III element semiconductor with a first type of doping, one or more quantum structures including a dilute-Antimonide group-III-Nitride disposed on the first type of doped group-III element semiconductor, and a group-III element semiconductor with a second type of doping disposed on the dilute-Antimonide group-III-Nitride. The concentration of the Antimony (Sb) can be adjusted to vary the energy bandgap of the dilute-Antimonide group-III-Nitride between 3.4 and 2.0 electron Volts (eV)
Public/Granted literature
- US20190013440A1 Dilute-Antimonide Group-II-Nitride Nanostructure Optoelectronic Devices Public/Granted day:2019-01-10
Information query
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