Invention Grant
- Patent Title: Transparent conductive structure and formation thereof
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Application No.: US14846655Application Date: 2015-09-04
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Publication No.: US10727374B2Publication Date: 2020-07-28
- Inventor: Jacob J. Richardson , Evan C. O'Hara , Chanseob Shin
- Applicant: Seoul Semiconductor Co., Ltd.
- Applicant Address: KR Asan, Gyeonggi-do
- Assignee: Seoul Semiconductor Co., Ltd.
- Current Assignee: Seoul Semiconductor Co., Ltd.
- Current Assignee Address: KR Asan, Gyeonggi-do
- Agency: Berkeley Law & Technology Group, LLP
- Main IPC: H01L33/42
- IPC: H01L33/42 ; H01L51/00 ; H01L31/18 ; H01L31/054 ; H01L21/67 ; H01L31/0224 ; H01L31/0304 ; H01L33/38 ; H01L51/52 ; H01L33/00 ; H01L33/32

Abstract:
Briefly, in accordance with one embodiment, a transparent conductive structure and method to form such a structure are described. For example, an apparatus may include an optoelectronic device. In such an embodiment, an optoelectronic device may include one or more zinc oxide crystals forming a single contiguous three-dimensional transparent conductive structure. The single contiguous three-dimensional transparent conductive structure may include one or more regions thereof having one or more three dimensional geometrical features in the one or more regions of the single contiguous three-dimensional transparent conductive structure so that the single contiguous three-dimensional transparent conductive structure possesses additional electrical-type and/or optical-type properties. For example, additional electrical-type and/or optical-type properties may include electrical current management and/or light management properties.
Public/Granted literature
- US20170069797A1 TRANSPARENT CONDUCTIVE STRUCTURE AND FORMATION THEREOF Public/Granted day:2017-03-09
Information query
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