Invention Grant
- Patent Title: Solid-state image sensor and image capturing device with setting of gate voltages of transfer and reset transistors
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Application No.: US16103300Application Date: 2018-08-14
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Publication No.: US10728480B2Publication Date: 2020-07-28
- Inventor: Atsushi Suzuki
- Applicant: Ricoh Company, Ltd.
- Applicant Address: JP Tokyo
- Assignee: RICOH COMPANY, LTD.
- Current Assignee: RICOH COMPANY, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Xsensus LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@32c15b99
- Main IPC: H04N5/335
- IPC: H04N5/335 ; H04N5/374 ; H04N5/376 ; H01L25/16 ; H01L27/146 ; H04N5/369 ; H04N5/3745 ; H04N5/363

Abstract:
An improved solid-state image sensor including a plurality of pixels. Each of the pixels includes a photoelectric convertor to convert a light signal into an electrical charge; a transfer transistor to transfer the electrical charge to a floating diffusion; a reset transistor to reset the floating diffusion; and an amplifier transistor to amplify a signal when the floating diffusion is connected to a gate of the amplifier transistor. A first voltage is set less than or equal to a second voltage. Each of a third voltage and a fourth voltage is set higher than a voltage of a ground. The third voltage is a gate voltage of the transistor resistor at times other than the time of reading a signal of the pixel and the fourth voltage is a gate voltage of the reset transistor at times other than a reset time of the reset transistor.
Public/Granted literature
- US20190068905A1 SOLID-STATE IMAGE SENSOR AND IMAGE CAPTURING DEVICE Public/Granted day:2019-02-28
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