A substrate processing method includes a first gas discharge step of discharging, from a first discharge port, a first gas containing a vapor of a low surface tension liquid having a lower surface tension than a processing liquid and spraying, to a liquid film of the processing liquid, the first gas from a direction intersecting the upper surface such that a liquid film removal region where the liquid film is removed from the liquid film of the processing liquid is formed, a second gas discharge step of discharging a second gas containing a vapor of a low surface tension liquid having a lower surface tension than the processing liquid from an annular second discharge port different from the first discharge port laterally and radially and a liquid film removal region enlargement step of enlarging the liquid film removal region.