- Patent Title: Triphenylgermylsilane and trichlorosilyl-trichlorogermane for the production of germanium-silicon layers, and method for the production thereof from trichlorosilyl-triphenylgermane
-
Application No.: US16618196Application Date: 2018-05-23
-
Publication No.: US10730754B2Publication Date: 2020-08-04
- Inventor: Julian Teichmann , Matthias Wagner , Hans-Wolfram Lerner
- Applicant: Evonik Operations GmbH
- Applicant Address: DE Essen
- Assignee: Evonik Operations GmbH
- Current Assignee: Evonik Operations GmbH
- Current Assignee Address: DE Essen
- Agency: Grüneberg and Myers PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1d1de750
- International Application: PCT/EP2018/063563 WO 20180523
- International Announcement: WO2018/219753 WO 20181206
- Main IPC: C07F7/30
- IPC: C07F7/30 ; C01B33/04

Abstract:
Triphenylgermylsilane (Ph3Ge—SiH3) is useful for the production of germanium-silicon layers (Ge—Si) or as transfer agent of silane groups (SiH3). Further, a method describes the production of triphenylgermylsilane (Ph3Ge—SiH3) by reducing trichlorosilyl-triphenylgermane (Ph3Ge—SiCl3) with a hydride in solution, and another method describes the production of trichlorosilytrichlorogermane (Cl3Ge—SiCl3) by reacting trichlorosilyltriphenyigermane (Ph3Ge—SiCl3) with hydrogen chloride (HCl) in the presence of AlCl3 in solution. In addition, trichlorosilyltrichlorogermane is also used for the production of germanium-silicon layers (Ge—Si).
Public/Granted literature
Information query