Invention Grant
- Patent Title: Silicon wafer with homogeneous radial oxygen variation
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Application No.: US16065268Application Date: 2016-12-07
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Publication No.: US10731271B2Publication Date: 2020-08-04
- Inventor: Karl Mangelberger , Walter Heuwieser , Michael Skrobanek
- Applicant: SILTRONIC AG
- Applicant Address: DE Munich
- Assignee: SILTRONIC AG
- Current Assignee: SILTRONIC AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@81347a3
- International Application: PCT/EP2016/080080 WO 20161207
- International Announcement: WO2017/108406 WO 20170629
- Main IPC: B32B3/00
- IPC: B32B3/00 ; C30B15/04 ; C30B30/04 ; C30B29/06 ; C30B15/30
Abstract:
The invention relates to a silicon wafer having a radial variation of oxygen concentration of less than 7%, determined over the entire radius of the silicon wafer. The wafers are produced in the PV region with rotation of crystal and crucible in the same direction, and in the presence of a horizontal magnetic field of defined intensity.
Public/Granted literature
- US20200149184A1 SILICON WAFER WITH HOMOGENEOUS RADIAL OXYGEN VARIATION Public/Granted day:2020-05-14
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