Invention Grant
- Patent Title: Group III nitride laminate and vertical semiconductor device having the laminate
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Application No.: US16312885Application Date: 2017-06-19
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Publication No.: US10731274B2Publication Date: 2020-08-04
- Inventor: Yoshinao Kumagai , Hisashi Murakami , Toru Kinoshita
- Applicant: STANLEY ELECTRIC CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: STANLEY ELECTRIC CO., LTD.
- Current Assignee: STANLEY ELECTRIC CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@fa6f4bd
- International Application: PCT/JP2017/022454 WO 20170619
- International Announcement: WO2017/221863 WO 20171228
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/32 ; C30B29/40
Abstract:
A group III nitride laminate having monocrystalline n-type AlxGa1-xN (0.7≤X≤1.0) and an electrode is provided. The group III nitride laminate is characterized in that an n-type contact layer made of (AlYGa1-Y)2O3 (0.0≤Y
Public/Granted literature
- US20190323146A1 GROUP III NITRIDE LAMINATE AND VERTICAL SEMICONDUCTOR DEVICE HAVING THE LAMINATE Public/Granted day:2019-10-24
Information query
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