Invention Grant
- Patent Title: Methods for detecting defects of a lithographic pattern
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Application No.: US16125107Application Date: 2018-09-07
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Publication No.: US10732124B2Publication Date: 2020-08-04
- Inventor: Sandip Halder , Philippe Leray
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4af2f698
- Main IPC: G06T7/00
- IPC: G06T7/00 ; G01N21/88 ; G03F7/20 ; G01N21/95 ; G01N21/956

Abstract:
Example embodiments relate to methods for detecting defects of a lithographic pattern. One example embodiment includes a method for detecting defects of a lithographic pattern on a semiconductor wafer that includes a plurality of die areas. Each of the die areas has a region of interest (ROI) that includes a plurality of features forming the lithographic pattern. The method includes acquiring an image of at least one of the ROIs. The method also includes removing features touching an edge of the image. Further, the method includes counting a number of remaining features in the image.
Public/Granted literature
- US20190079023A1 Methods for Detecting Defects of a Lithographic Pattern Public/Granted day:2019-03-14
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