Invention Grant
- Patent Title: Memory system including on-die termination and method of controlling on-die termination thereof
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Application No.: US16165139Application Date: 2018-10-19
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Publication No.: US10733119B2Publication Date: 2020-08-04
- Inventor: Changho Yun , Sung-Joon Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@17adbc71
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G06F13/16 ; G11C11/406 ; G11C7/10 ; G11C29/00 ; G11C5/04

Abstract:
A memory system includes a first dual in-line memory module (DIMM), a second DIMM, and a controller. The first DIMM may include a first memory device including a first on-die termination (ODT) circuit connected to a data line. The second DIMM may include a second memory device including a second ODT circuit connected to the data line. The controller is connected to the first and second memory devices through the data line, generates first and second delay information, and determines whether to change an ODT duration of the first or second ODT circuit using the first and second delay information. The first delay information is indicative of a time taken for command/address or clock signals to reach the first memory device. The second delay information is indicative of a time taken for command/address signal or clock signals to reach the second memory device.
Public/Granted literature
- US20190050352A1 MEMORY SYSTEM INCLUDING ON-DIE TERMINATION AND METHOD OF CONTROLLING ON-DIE TERMINATION THEREOF Public/Granted day:2019-02-14
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