Invention Grant
- Patent Title: Low latency direct access block storage in NVME-of ethernet SSD
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Application No.: US15655738Application Date: 2017-07-20
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Publication No.: US10733137B2Publication Date: 2020-08-04
- Inventor: Ramdas P. Kachare , Dong Gi Lee , Ajay Sundar Raj , Fred Worley
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G06F15/167
- IPC: G06F15/167 ; G06F16/245 ; G06F15/173

Abstract:
A method of low-latency direct data access to non-volatile flash memory in at least one NVMe-oF SSD device connected over Ethernet. The method includes transmitting, from a low-latency direct access (LL-DAX) block storage software layer at a host, a remote direct memory access (RDMA) write request to the flash memory. The RDMA write request includes data, a storage address, a length of a data transfer operation, and an operation code. The method also includes receiving, at the host, an RDMA level acknowledgement indicating that the data has been persisted to the flash memory. The method also includes transmitting, from the LL-DAX block storage software layer, an RDMA read request to the flash memory that includes a storage address, a length of a data transfer, and an operation code. The method also includes receiving, at the host, data packets from the flash memory corresponding to the RDMA read request.
Public/Granted literature
- US20180307650A1 LOW LATENCY DIRECT ACCESS BLOCK STORAGE IN NVME-OF ETHERNET SSD Public/Granted day:2018-10-25
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