Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16287587Application Date: 2019-02-27
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Publication No.: US10734063B2Publication Date: 2020-08-04
- Inventor: Koji Nii
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@61cd3d25 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1e03661e
- Main IPC: G11C11/408
- IPC: G11C11/408 ; G11C15/04 ; G11C7/10 ; G11C7/24 ; G11C11/16 ; G11C11/4093 ; G11C11/4097 ; G11C11/411 ; G11C11/412

Abstract:
A semiconductor device includes: a first cell; a second cell; a first match line and a second match line; a first search line pair, first data being transmitted through the first search line pair; a second search line pair, second data being transmitted through the second search line pair; a first logical operation cell connected to the first search line pair and the first match line, and configured to drive the first match line based on a result of comparison between information held by the first and second cells and the first data; and a second logical operation cell connected to the second search line pair and the second match line, and configured to drive the second match line based on a result of comparison between information held by the first and second cells and the second data.
Public/Granted literature
- US20190259443A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-08-22
Information query
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