Invention Grant
- Patent Title: Word line discharge skip for faster read time
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Application No.: US16456029Application Date: 2019-06-28
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Publication No.: US10734077B1Publication Date: 2020-08-04
- Inventor: Norihiro Kamae , Yosuke Kato
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/08 ; G06F3/06 ; G11C16/32

Abstract:
Methods for improving read time performance and energy consumption when reading multiple pages within a memory block by dynamically skipping or accelerating unselected word line discharge cycles are described. In some cases, a controller or one or more control circuits in communication with word lines and bit lines associated with a memory block may detect that a read command or instruction for reading a second page within the memory block has arrived prior to the word line discharge phase associated with reading a first page within the memory block, and in response, the controller may skip the discharge cycle for unselected word lines within the memory block prior to reading the second page and initiate the next page read for the second page after a partial discharge period of time.
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