Invention Grant
- Patent Title: Substrate conductor structure and method
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Application No.: US16141181Application Date: 2018-09-25
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Publication No.: US10734282B2Publication Date: 2020-08-04
- Inventor: Harold Ryan Chase , Mihir K Roy , Mathew J Manusharow , Mark Hlad
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H01L23/00 ; H01L23/48 ; H01L21/768 ; H01L21/288 ; H05K3/46 ; H01L23/552 ; H01L23/498 ; H01L23/36
Abstract:
Embodiments of substrates, semiconductor devices and methods are shown that include elongated structures to improve conduction. Elongated structures and methods are also shown that provide electromagnetic isolation to reduce noise in adjacent components.
Public/Granted literature
- US20190027405A1 SUBSTRATE CONDUCTOR STRUCTURE AND METHOD Public/Granted day:2019-01-24
Information query
