Invention Grant
- Patent Title: Abnormality detection apparatus
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Application No.: US15800306Application Date: 2017-11-01
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Publication No.: US10734291B2Publication Date: 2020-08-04
- Inventor: Noriaki Koyama , Kazushi Shoji , Motokatsu Miyazaki
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Abelman, Frayne & Schwab
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@59739666
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01R31/26 ; G06F17/18 ; G06F19/00

Abstract:
Disclosed is an abnormality detection apparatus including: a collection unit that collects state information indicating a state of each part of a semiconductor manufacturing apparatus in a predetermined cycle; a storage unit that stores the state information collected by the collection unit as a log for each predetermined unit; an arithmetic unit that generates a monitoring band for monitoring the state of each part of the semiconductor manufacturing apparatus, based on the log; and a determination unit that determines whether the state of each part of the semiconductor manufacturing apparatus is abnormal, based on the state information and the monitoring band.
Public/Granted literature
- US20180138096A1 ABNORMALITY DETECTION APPARATUS Public/Granted day:2018-05-17
Information query
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