Invention Grant
- Patent Title: Package with tilted interface between device die and encapsulating material
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Application No.: US16223783Application Date: 2018-12-18
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Publication No.: US10734299B2Publication Date: 2020-08-04
- Inventor: Ming-Yen Chiu , Hsin-Chieh Huang , Ching Fu Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L23/31 ; H01L21/78 ; H01L23/48 ; H01L21/56 ; H01L21/3105 ; H01L21/768 ; H01L23/00 ; H01L25/10

Abstract:
A method includes forming a polymer layer covering a metal via in a wafer, grooving the wafer to form a trench, wherein the trench extends from a top surface of the polymer layer into the wafer, and performing a die-saw on the wafer to separate the wafer into a plurality of device dies. A kerf passes through the trench. One of the device dies is placed over a carrier. An encapsulating material is dispensed over and around the device die. The method further includes pressing and curing the encapsulating material. After the encapsulating material is cured, a sidewall of the polymer layer is tilted. A planarization is performed on the encapsulating material until the polymer layer and the metal via are exposed. A redistribution line is formed over and electrically coupled to the metal via.
Public/Granted literature
- US20190122948A1 Package with Tilted Interface Between Device Die and Encapsulating Material Public/Granted day:2019-04-25
Information query
IPC分类: