Invention Grant
- Patent Title: Power and RF devices implemented using an engineered substrate structure
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Application No.: US16179351Application Date: 2018-11-02
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Publication No.: US10734303B2Publication Date: 2020-08-04
- Inventor: Vladimir Odnoblyudov , Cem Basceri , Shari Farrens , Ozgur Aktas
- Applicant: QROMIS, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Qromis, Inc.
- Current Assignee: Qromis, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L21/02 ; H01L23/66 ; H01L29/20 ; H01L29/78 ; H01L25/16 ; H01L33/32 ; H01L33/64 ; H01P1/30 ; H01P3/00 ; H03H9/02 ; B81B3/00 ; H03H9/17

Abstract:
An electronic device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The electronic device also includes a buffer layer coupled to the support structure, a contact layer coupled to the buffer layer, and a field-effect transistor (FET) coupled to the contact layer.
Public/Granted literature
- US20190139859A1 POWER AND RF DEVICES IMPLEMENTED USING AN ENGINEERED SUBSTRATE STRUCTURE Public/Granted day:2019-05-09
Information query
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