Invention Grant
- Patent Title: Bonded semiconductor devices and methods of forming the same
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Application No.: US16138166Application Date: 2018-09-21
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Publication No.: US10734348B2Publication Date: 2020-08-04
- Inventor: Chen-Hua Yu , Tung-Liang Shao , Chih-Hang Tung
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L25/075

Abstract:
A method includes patterning a cavity through a first passivation layer of a first package component, the first package component comprising a first semiconductor substrate and bonding the first package component to a second package component. The second package component comprises a second semiconductor substrate and a second passivation layer. Bonding the first package component to the second package component comprises directly bonding the first passivation layer to the second passivation layer; and reflowing a solder region of a conductive connector disposed in the cavity to electrically connect the first package component to the second package component.
Public/Granted literature
- US20200098720A1 BONDED SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME Public/Granted day:2020-03-26
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