Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US16099753Application Date: 2017-04-10
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Publication No.: US10734350B2Publication Date: 2020-08-04
- Inventor: Kazutaka Honda , Koichi Chabana , Makoto Satou , Akira Nagai
- Applicant: HITACHI CHEMICAL COMPANY, LTD.
- Applicant Address: JP Tokyo
- Assignee: HITACHI CHEMICAL COMPANY, LTD.
- Current Assignee: HITACHI CHEMICAL COMPANY, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Fitch, Even, Tabin & Flannery, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@37054e52 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@20581418
- International Application: PCT/JP2017/014680 WO 20170410
- International Announcement: WO2017/195517 WO 20171116
- Main IPC: H01L23/00
- IPC: H01L23/00 ; C09J163/00 ; C09J201/00 ; C09J11/06 ; H01L21/56 ; C09J7/30 ; H01L23/31 ; H01L25/065 ; H01L25/00

Abstract:
There is disclosed a method for manufacturing a semiconductor device comprising a semiconductor chip having a connection portion and a wiring circuit board having a connection portion, the respective connection portions being electrically connected to each other, or a semiconductor device comprising a plurality of semiconductor chips having connection portions, the respective connection portions being electrically connected to each other. The connection portions consist of metal. The above described method comprises: (a) a first step of press-bonding the semiconductor chip and the wiring circuit board or the semiconductor chips to each other so that the respective connection portions are in contact with each other with a semiconductor adhesive interposed therebetween, at a temperature lower than a melting point of the metal of the connection portion, to obtain a temporarily connected body; (b) a second step of sealing at least a part of the temporarily connected body with a sealing resin to obtain a sealed temporarily connected body; and (c) a third step of heating the sealed temporarily connected body at a temperature equal to or higher than the melting point of the metal of the connection portion, to obtain a sealed connected body.
Public/Granted literature
- US20190123014A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-04-25
Information query
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