A semiconductor device includes a plurality of switching devices and a semiconductor substrate. The switching devices are connected in parallel to be driven. The switching devices are at the semiconductor substrate. Each of the switching devices, in a plan view of the semiconductor substrate, includes: a cell region as an IGBT that is provided with an active trench gate to be applied with a gate voltage; a periphery region as a contour of the switching device; and a non-cell region configured to isolate the cell region from the periphery region and arranged with a pad to provide an electrical connection to the cell region. The non-cell region is also provided with an active trench gate that is at a position without overlapping the pad.