Invention Grant
- Patent Title: Three-dimensional semiconductor memory devices having dummy channel layers
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Application No.: US15788476Application Date: 2017-10-19
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Publication No.: US10734396B2Publication Date: 2020-08-04
- Inventor: Byung Woo Kang
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2c60128f
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/11556 ; H01L27/11519 ; H01L27/11582 ; H01L21/762 ; H01L27/11565
Abstract:
Provided herein may be a semiconductor device. The semiconductor device may include a stack, channel holes passing through the stack, dummy channel holes passing through the stack and disposed between the channel holes, a slit passing through the stack and the dummy channel holes.
Public/Granted literature
- US20180277556A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-09-27
Information query
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