Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16681624Application Date: 2019-11-12
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Publication No.: US10734401B1Publication Date: 2020-08-04
- Inventor: Jae Taek Kim , Hye Yeong Jung
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: Sk hynix Inc.
- Current Assignee: Sk hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3a2eea5a
- Main IPC: H01L27/11575
- IPC: H01L27/11575 ; H01L27/11524 ; H01L27/11556 ; H01L27/11548 ; G11C16/08 ; H01L27/1157 ; H01L27/11582 ; H01L27/11573 ; G11C16/04 ; H01L27/11529
Abstract:
The present technology relates to a semiconductor memory device. The semiconductor memory device includes a plurality of channel plugs disposed in a cell region of a semiconductor substrate, a first dummy region disposed at one end portion of the cell region and a second dummy region disposed at an other end portion of the cell region, and first dummy plugs disposed in the first dummy region and second dummy plugs disposed in the second dummy region. The number of the first dummy plugs is different than the number of the second dummy plugs.
Information query
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