According to one embodiment, a semiconductor memory device includes first conductive films, a second conductive film, a first pillar including a first semiconductor film and a first insulator, a second semiconductor film, and a second pillar including a second insulator and a third conductive film. The first conductive films are stacked with respective insulator layers interposed therebetween. The second conductive film is provided above the first conductive films with an insulator layer interposed therebetween. The first semiconductor film penetrate the first conductive films in a stacking direction of the first conductive films. The first insulator is provided on a side surface of the first semiconductor film.