Invention Grant
- Patent Title: Semiconductor apparatus having a reset transistor for resetting a potential in a semiconductor region
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Application No.: US16241251Application Date: 2019-01-07
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Publication No.: US10734422B2Publication Date: 2020-08-04
- Inventor: Tomoya Sasago , Kazuaki Tashiro
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc. IP Division
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@10ee61ca
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/378 ; H04N5/3745 ; H04N5/374

Abstract:
There is provided a semiconductor apparatus including a first semiconductor region of a first conductive type in which a potential to be detected appears, a second semiconductor region of a second conductive type forming a p-n junction with the first semiconductor region, an amplification transistor including a gate to which the first semiconductor region is connected, and a reset transistor configured to reset a potential of the first semiconductor region. In the semiconductor apparatus, one of a source and a drain of the reset transistor is connected to the first semiconductor region, and the other one of the source and the drain of the reset transistor is connected to the second semiconductor region.
Public/Granted literature
- US20190221594A1 SEMICONDUCTOR APPARATUS AND EQUIPMENT Public/Granted day:2019-07-18
Information query
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