Invention Grant
- Patent Title: Image sensor and method for fabricating the same
-
Application No.: US16033757Application Date: 2018-07-12
-
Publication No.: US10734425B2Publication Date: 2020-08-04
- Inventor: Do-Hwan Kim , Ji-Suk Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6588527c
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/232
Abstract:
An image sensor, comprising: a pixel array in which a plurality of pixels are arranged, wherein at least one of the plurality of pixels includes: a substrate including a photoelectric transformation element having a light receiving region and a light shielding region; and a first hafnium-containing layer formed to contact the substrate corresponding to the light shielding region.
Public/Granted literature
- US20190148432A1 IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-05-16
Information query
IPC分类:
