Invention Grant
- Patent Title: Storage device
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Application No.: US15910786Application Date: 2018-03-02
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Publication No.: US10734445B2Publication Date: 2020-08-04
- Inventor: Minoru Oda , Akira Yotsumoto , Kotaro Noda
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@685f24cd
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/24 ; H01L23/528 ; H01L29/66 ; H01L29/45 ; H01L21/768 ; H01L21/311 ; H01L29/06
Abstract:
A storage device including a transistor portion including a transistor, a plurality of interlayer insulating films provided above the transistor portion, a plurality of first conductive layers provided respectively between the plurality of interlayer insulating films, and a second conductive layer extending through the plurality of interlayer insulating films and the plurality of first conductive layers, the second conductive layer having one end electrically connected to the transistor portion, and a part that extends beyond a portion of the transistor portion.
Public/Granted literature
- US20190088719A1 STORAGE DEVICE Public/Granted day:2019-03-21
Information query
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