Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15925630Application Date: 2018-03-19
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Publication No.: US10734478B2Publication Date: 2020-08-04
- Inventor: Jhon-Jhy Liaw
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/8234 ; H01L27/11 ; H01L29/417 ; H01L27/088
Abstract:
A semiconductor device includes a substrate, a first circuit, and a second circuit. The first circuit is disposed on the substrate and includes a first semiconductor fin and a first gate electrode straddling the first semiconductor fin. The second circuit is different from the first circuit and disposed on the substrate. The second circuit includes a second semiconductor fin and a second gate electrode straddling the second semiconductor fin. A width of the first semiconductor fin is different from a width of the second semiconductor fin.
Public/Granted literature
- US20190288069A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-09-19
Information query
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