A semiconductor device includes a transistor. The transistor includes a source region adjacent to a first main surface of a semiconductor substrate, the source region being electrically coupled to a source terminal via a source contact. The transistor further includes a gate electrode over the first main surface of the semiconductor substrate, a drain region adjacent to a second main surface of the semiconductor substrate, and a conductive plate vertically adjacent to the gate electrode. The conductive plate is in electrical contact with the source terminal. The transistor further includes an insulating material arranged between the conductive plate and the source contact in a direction parallel to the first main surface.