BJT devices with 3D wrap around emitter are provided. In one aspect, a method of forming a BJT device includes: forming a substrate including a first doped layer having a dopant concentration of from about 1×1020 at. % to about 5×1020 at. % and ranges therebetween, and a second doped layer having a dopant concentration of from about 1×1015 at. % to about 1×1018 at. % and ranges therebetween, wherein the first and second doped layers form a collector; patterning a fin(s) in the substrate; forming bottom spacers at a bottom of the fin(s); forming a base(s) that wraps around the fin(s); forming an emitter(s) that wraps around the base(s); and forming sidewall spacers alongside the emitter(s). A BJT device is also provided.