Invention Grant
- Patent Title: Lateral bipolar junction transistor with dual base region
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Application No.: US15828152Application Date: 2017-11-30
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Publication No.: US10734505B2Publication Date: 2020-08-04
- Inventor: Pouya Hashemi , Bahman Hekmatshoartabari , Alexander Reznicek , Karthik Balakrishnan , Jeng-Bang Yau
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/737 ; H01L29/205 ; H01L29/20 ; H01L21/308 ; H01L21/265 ; H01L21/266 ; H01L21/306 ; H01L29/66 ; H01L29/735 ; H01L29/08
Abstract:
A structure and method of forming a lateral bipolar junction transistor (LBJT) that includes: a first base layer, a second base layer over the first base layer, and an emitter region and collector region present on opposing sides of the first base layer, where the first base layer has a wider-band gap than the second base layer, and where the first base layer includes a III-V semiconductor material.
Public/Granted literature
- US20190165150A1 LATERAL BIPOLAR JUNCTION TRANSISTOR WITH DUAL BASE REGION Public/Granted day:2019-05-30
Information query
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