Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16706432Application Date: 2019-12-06
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Publication No.: US10734510B2Publication Date: 2020-08-04
- Inventor: Hajime Matsuda
- Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Applicant Address: JP Kanagawa
- Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee Address: JP Kanagawa
- Agency: Smith, Gambrell & Russell, LLP.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2892d046
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/778 ; H01L29/51 ; H01L29/40 ; H01L29/66 ; H01L29/20 ; H01L29/423

Abstract:
A process for forming a nitride semiconductor device is disclosed. The resulting semiconductor device includes a semiconductor stack with a top layer containing gallium (Ga) and nitrogen (N), electrodes of a source, a gate and a drain provided on the semiconductor stack, and a silicon nitride (SiN) film provided on the GaN layer between the drain electrode and the gate electrode but apart from the gate electrode. The SiN film has a silicon rich composition with a composition ratio of Si/N that is greater than ¾ and substantial oxygen contents.
Public/Granted literature
- US20200127129A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-04-23
Information query
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