Invention Grant
- Patent Title: Light emitting diode with displaced P-type doping
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Application No.: US16688754Application Date: 2019-11-19
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Publication No.: US10734542B2Publication Date: 2020-08-04
- Inventor: David P. Bour , Dmitry S. Sizov
- Applicant: Apple Inc.
- Agency: Jaffery Watson Mendonsa & Hamilton LLP
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/30 ; H01L33/14 ; H01L33/06 ; H01L33/02
Abstract:
Light emitting diodes are described. In an embodiment, an LED includes a graded p-side spacer layer on a p-type confinement layer, and the graded p-side spacer layer graded from an initial band gap adjacent the p-type confinement layer to a lower band gap. For example, the graded band gap may be achieved by a graded Aluminum concentration.
Public/Granted literature
- US20200161496A1 LIGHT EMITTING DIODE WITH DISPLACED P-TYPE DOPING Public/Granted day:2020-05-21
Information query
IPC分类:
