An embodiment relates to a semiconductor device, a semiconductor device package, and a method for producing a semiconductor device, the semiconductor device comprising a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and an intermediate layer disposed between the first conductivity type semiconductor layer and the active layer, or disposed inside the first conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the intermediate layer, the active layer, and the second conductivity type semiconductor layer include aluminum, and the intermediate layer includes a first intermediate layer having a lower aluminum composition than that of the first conductivity type semiconductor layer.