Invention Grant
- Patent Title: Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same
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Application No.: US16059783Application Date: 2018-08-09
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Publication No.: US10734548B2Publication Date: 2020-08-04
- Inventor: Katsuhiro Imai , Yoshitaka Kuraoka , Mikiya Ichimura , Takayuki Hirao
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya, Aichi
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Nagoya, Aichi
- Agency: Flynn Thiel, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@dad2aca
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/18 ; H01L33/06 ; H01L31/0392 ; H01L33/16 ; H01L21/02 ; C30B29/68 ; C30B19/12 ; C30B29/40 ; H01L31/0304 ; C30B19/02 ; C30B9/12 ; C30B25/18 ; H01L29/04 ; H01L29/165 ; H01L29/20
Abstract:
A free-standing substrate of a polycrystalline nitride of a group 13 element is composed of a plurality of monocrystalline particles having a particular crystal orientation in approximately a normal direction. The free-standing substrate has a top surface and a bottom surface. The polycrystalline nitride of the group 13 element is gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof and contains zinc at a concentration of 1×1017 atoms/cm3 or more and 1×1020 atoms/cm3 or less.
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