Invention Grant
- Patent Title: High voltage monolithic LED chip with improved reliability
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Application No.: US16290084Application Date: 2019-03-01
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Publication No.: US10734558B2Publication Date: 2020-08-04
- Inventor: Bradley E Williams , Kevin W Haberern , Bennett D Langsdorf , Manuel L Breva
- Applicant: CREE, INC.
- Applicant Address: CN Huizhou
- Assignee: Cree Huizhou Solid State Lighting Company Limited
- Current Assignee: Cree Huizhou Solid State Lighting Company Limited
- Current Assignee Address: CN Huizhou
- Agency: Ferguson Case Orr Paterson LLP
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/62 ; H01L25/075 ; H01L33/40 ; H01L33/46 ; H01L33/08 ; H01L33/38 ; H01L27/15

Abstract:
Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
Public/Granted literature
- US10957830B2 High voltage monolithic LED chip with improved reliability Public/Granted day:2021-03-23
Information query
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