Invention Grant
- Patent Title: Device with capping layer for improved residue defect and method of production thereof
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Application No.: US16038897Application Date: 2018-07-18
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Publication No.: US10734572B2Publication Date: 2020-08-04
- Inventor: Yi Jiang , Curtis Chun-I Hsieh , Wanbing Yi , Juan Boon Tan
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Ditthavong & Steiner P.C.
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L23/532 ; H01L43/12 ; H01L27/22
Abstract:
A device including a capping layer over a portion of a top electrode, and method of production thereof. Embodiments include an MRAM cell in a first region and a logic area in a second region of a substrate, wherein the MRAM cell includes a MTJ pillar between a top electrode and a bottom electrode; and a capping layer over a portion of the top electrode.
Public/Granted literature
- US20200028067A1 DEVICE WITH CAPPING LAYER FOR IMPROVED RESIDUE DEFECT AND METHOD OF PRODUCTION THEREOF Public/Granted day:2020-01-23
Information query
IPC分类:
