Invention Grant
- Patent Title: Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
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Application No.: US16591804Application Date: 2019-10-03
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Publication No.: US10734574B2Publication Date: 2020-08-04
- Inventor: Bartlomiej Adam Kardasz , Mustafa Michael Pinarbasi , Jacob Anthony Hernandez
- Applicant: Spin Memory, Inc.
- Applicant Address: US CA Fremont
- Assignee: Spin Memory, Inc.
- Current Assignee: Spin Memory, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Arnold & Porter Kaye Scholer
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L43/12 ; H01L43/08 ; H01F10/32 ; H01F41/30

Abstract:
A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a structure is disclosed. The pSAF structure comprises a first high perpendicular Magnetic Anisotropy (PMA) multilayer and a second high PMA layer separated by a thin Ruthenium layer. Each PMA layer is comprised of a first cobalt layer and a second cobalt layer separated by a nickel/cobalt multilayer. After each of the first and second PMA layers and the Ruthenium exchange coupling layer are deposited, the resulting structure goes through a high temperature annealing step, which results in each of the first and second PMA layers having a perpendicular magnetic anisotropy.
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