Invention Grant
- Patent Title: Semiconductor laser device
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Application No.: US16665299Application Date: 2019-10-28
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Publication No.: US10734784B2Publication Date: 2020-08-04
- Inventor: Hideyuki Fujimoto
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@79809ebf
- Main IPC: H01S5/022
- IPC: H01S5/022 ; H01S5/024

Abstract:
A semiconductor laser device includes: a housing including: a recess, and a plurality of wiring parts disposed inside the recess; a submount including: a first main surface fixed to a lower upward-facing surface of the recess, and a second main surface opposite to a first main surface, wherein, in a plan view of the semiconductor laser device, the submount is disposed between the first upper upward-facing surface and a second upper upward-facing surface of the recess; a semiconductor laser element; a light reflecting member; a first wire; and a second wire.
Public/Granted literature
- US20200059066A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2020-02-20
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