A memory system includes a first and a second flash domain, a domain distributor, and a first redirector. The first and second flash domains includes first and second spare memory dies, respectively. The domain distributor is configured to generate a first logical address corresponding to first data and to generate a second logical address corresponding to second data. The first redirector is configured to receive the first data and the second data from the domain distributor and to respectively provide the first data and the second data to the first flash domain and the second flash domain. The first redirector is configured to provide a part of the second data corresponding to a first fail memory die to the first flash domain, if the second flash domain include the first fail memory die, such that the first redirector replaces the first fail memory die with the first spare memory die.