Methods of operating a memory, and memory configured to perform similar methods, might include applying a particular multi-step programming pulse to a selected access line of a programming operation, and applying a next subsequent multi-step programming pulse to the selected access line, wherein the particular multi-step programming pulse has a first step having a first voltage level and a second step having a second voltage level different than the first voltage level, and wherein the next subsequent multi-step programming pulse has a first step having a third voltage level and a second step having a fourth voltage level different than the third voltage level and higher than the first voltage level.