- Patent Title: Method for washing semiconductor manufacturing apparatus component, apparatus for washing semiconductor manufacturing apparatus component, and vapor phase growth apparatus
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Application No.: US16223689Application Date: 2018-12-18
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Publication No.: US10741380B2Publication Date: 2020-08-11
- Inventor: Masashi Mizuta , Yuichi Yaguchi , Yutaka Nishikori
- Applicant: FURUKAWA CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: FURUKAWA CO., LTD.
- Current Assignee: FURUKAWA CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Rankin, Hill & Clark LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1dc0886c com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@33c25bc1
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/44 ; H01L21/67

Abstract:
A method for washing a semiconductor manufacturing apparatus component, the method comprising: a first process of disposing a semiconductor manufacturing apparatus component, to which a nitride semiconductor adheres, in a component holding portion inside a reaction tank of a washing apparatus; a second process of introducing a halogen-containing gas from a gas introducing pipe into the reaction tank to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component; a third process of trapping a reaction product generated by a reaction of the halogen-containing gas and the nitride semiconductor in a trapping unit; and a fourth process of discharging the reaction product trapped by the trapping unit from a gas discharging pipe to outside of the reaction tank.
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