Invention Grant
- Patent Title: Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
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Application No.: US15896940Application Date: 2018-02-14
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Publication No.: US10741399B2Publication Date: 2020-08-11
- Inventor: Eric Mazur , Mengyan Shen
- Applicant: President & Fellows of Harvard College
- Applicant Address: US MA Cambridge
- Assignee: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
- Current Assignee: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
- Current Assignee Address: US MA Cambridge
- Agency: Nelson Mullins Riley & Scarborough LLP
- Main IPC: H01L21/268
- IPC: H01L21/268 ; B23K26/12 ; H01L21/02 ; H01L29/34 ; H01L29/30 ; H01L21/67 ; H01L21/225 ; H01L21/302
Abstract:
The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.
Public/Granted literature
- US20180182630A1 Femtosecond Laser-Induced Formation Of Submicrometer Spikes On A Semiconductor Substrate Public/Granted day:2018-06-28
Information query
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