Invention Grant
- Patent Title: Fin field effect transistor (FinFET) device structure and method for forming the same
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Application No.: US16384491Application Date: 2019-04-15
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Publication No.: US10741408B2Publication Date: 2020-08-11
- Inventor: Chang-Yin Chen , Chai-Wei Chang , Chia-Yang Liao , Bo-Feng Young
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/311 ; H01L29/423 ; H01L21/28 ; H01L21/3213
Abstract:
A FinFET device structure and method for forming the same are provided. The fin field effect transistor (FinFET) device structure includes a fin structure formed over a substrate and a gate structure traversing over the fin structure. The gate structure includes a gate electrode layer which includes an upper portion above the fin structure and a lower portion below the fin structure. The upper portion has a top surface with a first width, the lower portion has a bottom surface with a second width, and the first width is greater than the second width.
Public/Granted literature
- US20190244830A1 Fin Field Effect Transistor (FinFET) Device Structure and Method for Forming the Same Public/Granted day:2019-08-08
Information query
IPC分类:
