Invention Grant
- Patent Title: Co-packaged die on leadframe with common contact
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Application No.: US16734193Application Date: 2020-01-03
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Publication No.: US10741479B2Publication Date: 2020-08-11
- Inventor: Patrick M. Shea
- Applicant: GREAT WALL SEMICONDUCTOR CORPORATION
- Applicant Address: US AZ Tempe
- Assignee: Great Wall Semiconductor Corporation
- Current Assignee: Great Wall Semiconductor Corporation
- Current Assignee Address: US AZ Tempe
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/49
- IPC: H01L23/49 ; H01L23/31 ; H01L21/56 ; H01L23/495 ; H01L21/60 ; H01L23/00
Abstract:
A leadframe includes a common contact. A first transistor is disposed over the leadframe with a first interconnect structure of the first transistor disposed over the common contact. A second transistor is disposed over the leadframe with a second interconnect structure of the second transistor disposed over the common contact.
Public/Granted literature
- US20200144161A1 CO-PACKAGED DIE ON LEADFRAME WITH COMMON CONTACT Public/Granted day:2020-05-07
Information query
IPC分类:
