Invention Grant
- Patent Title: SOI substrate and related methods
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Application No.: US15961642Application Date: 2018-04-24
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Publication No.: US10741487B2Publication Date: 2020-08-11
- Inventor: Michael J. Seddon , Mark Griswold
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Adam R. Stephenson, Ltd.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L23/522 ; H01L23/34 ; H01L21/786 ; H01L21/02 ; H01L23/12
Abstract:
Implementations of a silicon-on-insulator (SOI) die may include a silicon layer including a first side and a second side, and an insulative layer coupled directly to the second side of the silicon layer. The insulative layer may not be coupled to any other silicon layer.
Public/Granted literature
- US20190326211A1 SOI SUBSTRATE AND RELATED METHODS Public/Granted day:2019-10-24
Information query
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